Power Diodes (Stud/Flat Type)

Silicon Diodes are electronic components that conduct current in only one direction. In function, they are similar to one-way valves. Silicon Diodes, using semiconductor materials such as silicon are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Semiconductor diodes consist of a PN junction having two terminals, an anode (+) and a cathode (-). Current flows from the anode to the cathode within the diode. Diodes can be used as voltage regulators, tuning devices in RF tuned circuits, frequency multiplying devices in RF circuits, mixers in RF circuits, switching applications, or can be used to make logic decisions in digital circuits.

Diodes can be sub-divided into six major categories:

  • General Purpose Diodes (PN junction diodes)
  • PIN Diodes
  • Schottky Barrier Diodes
  • Step-recovery Diodes
  • Varactor Diodes
  • Zener Diodes
  • Laser Diodes

PIN Diodes are three-layer Semiconductor Diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other Diode parameters determines the resistance of the Diode at RF and microwave frequencies. This resistance typically ranges from kilo ohms to less than 1 ohm for a given diode. PIN Diodes are typically used as switches or attenuator elements.

Step-recovery Diodes employ graded doping where the doping level of the Semi conductive materials is reduced as the P/N junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. These Diodes are used in very high frequency (VHF) and fast switching applications.

Varactor Diodes are P/N junction Diodes that are designed to act as a voltage-controlled capacitance when operated under reverse bias. One characteristic of P/N junctions is inherent capacitance. When the junction is reverse biased, increasing the applied voltage will cause the depletion region to widen, thus increasing the effective distance between the two “plates” of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled and changes can be applied using reverse voltage. A four-to-one capacitance range is not unusual; a typical varactor diode (sometimes called a “varicap diode”) might vary from Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behaviour (i.e., the current passes through the structure more readily with one polarity than the other). Schottky diodes are used primarily in high frequency, fast-switching applications, and in many digital circuits to decrease switching times.

PlateTypeMechstructureFig.Ref.Width(W)mmHeight(W)mmF.L(Cx2) +PXNPitch(P)mmSpindleDia(D)      EProjections on  both sides mm
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D
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F
G
K
M
Q
R
Y
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N
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P
L
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LA
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L
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LA
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LA
L
LA
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LA
L
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LA
L
LA
L
LA
L
LA
L
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6
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4
6
2
2
4
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2
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5
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2
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4
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1
1
17
23
23
36
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50
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50
76
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62
62
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76
83
83
100
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152
152
100
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381
381
32
35
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35
48
68
68
100
100
100
100
122
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122
100
100
185
185
100
10
32+PxN
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32+PxN
32+PxN
20+PxN
20+PxN
20+PxN
20+PxN
45+PxN
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45+PxN
45+PxN
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45+PxN
45+PxN
45+PxN
51+PxN
51+PxN
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3. 35
5.8
5.8
7.1
7.0
8.5
7.0
8.5
9.9
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17.3
9.9
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9.9
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12.2
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Device VRRM IF(AV)TCVFMIFSMI2tIRRMRth(j-c)Mounting     
TypeIF(AV) @ I peakTorqueHeat Sink Rec.Thread Package Outline
(V)
(V)(A)(0C)(A)A2Sx103(mA)(0C/W)(Nm)
12NA/RA
400-1800121601.32650.351222K1M-6DO-4A
16NA/RA
400-1800161601.23500.61241.62K1M-6DO-4A
25NA/RA
400-1800251401.354000.841.52K1M-5, M-6DO-4A
25NB/RB
400-1800251401.354000.841.52K2, K3M-6.M-8,1/4"DO-5B
40NB/RB
400-1800401401.355001.251014K2, K3M-6,M-8, 1/4"DO-5B
PAO40A/PAO40C
800-1800401401.355001.251014RRAM-8DO-5B
70NC/RC
400-1800701401.3512007.1100.454K3, K4M-6,M-8DO-5C
100NE/RE (Flat Base)
400-18001001301.5230024150.410K4, K5 Flat BaseDO-8E
100ND/RD
400-18001001301.5230024150.410K4, K5M-16DO-8D
150ND/RD
400-18001501301.4357064220.2510K4, K5M-16DO-8D
200NE/RE (Flat Base)
400-18002001301.35365066.6220.2510K4, K5Flat BaseDO-8E
200ND/RD
400-18002001301.35365066.6220.2510K4, K5M-16DO-8D
250NF/RF (Flat Base)
400-18002501301.35450092.5400.1830K5Flat BaseDO-9F,G
250NG/RG
400-18002501301.35450092.5400.1830K5M-20DO-9F,G
300NF/RF (Flat Base)
400-18003001301.45000125500.1230K5Flat BaseDO-9F,G
300NG/RG
400-18003001301.45000125500.1230K5M-20DO-9F,G
320NF/RF (Flat Base)
400-18003201301.655500151500.1230K5Flat BaseDO-9F,G
320NG/RG
400-18003201301.655500151500.1230K5M-20DO-9F,G
350NF/RF (Flat Base)
400-18003501251.26000180500.1230K5Flat BaseDO-9F,G
350NG/RG
400-18003501251.26000180500.1230K5M-20DO-9F,G
400NG/RG
400-18004001201.62 *8250340500.1250K5M-20DO-9F,G
400NF/RF (Flat Base)
400-18004001201.62 *8250340500.1250K5Flat BaseDO-9F,G
410NJ/RJ (Stud)
400-18004001201.62*8250340500.1250K5M-20, M-24D0-9J
410NU/RU (60x60 Base)
1200-36004101201.15 *7000245500.1515 /BoltED, K5Flat BaseUU
570NU/RU (60 x 60 Base)
1200-4300570801.65 *12000725500.06515 /BoltEDFlat BaseUU
860NU/RU (60 x 60 Base)
1200-1800860801.65 *16000725500.06515 /BoltEDFlat BaseUU
40029131 (Stud/Ceramic)
2300-28002801001.30 *6500125500.1330K53/4 UNFDO-9H
40029132 (Stud/Ceramic)
2300-28002801001.30 *6500125500.130K53/4 UNFDO-9H
400NFC/RFC (Ceramic Flat)
400-18004001201.62 *8250340500.1250EDFLATDO-9F
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